A finite‐volume scheme for the multidimensional quantum drift‐diffusion model for semiconductors

A finite‐volume scheme for the stationary unipolar quantum drift‐diffusion equations for semiconductors in several space dimensions is analyzed. The model consists of a fourth‐order elliptic equation for the electron density, coupled to the Poisson equation for the electrostatic potential, with mixed Dirichlet‐Neumann boundary conditions. The numerical scheme is based on a Scharfetter‐Gummel type reformulation of the equations. The existence of a sequence of solutions to the discrete problem and its numerical convergence to a solution to the continuous model are shown. Moreover, some numerical examples in two space dimensions are presented. © 2010 Wiley Periodicals, Inc. Numer Methods Partial Differential Eq 27: 1483–1510, 2011     

The interlayer shear effect on graphene multilayer resonators

Graphene nanostrips with single or few layers can be used as bending resonators with extremely high sensitivity to environmental changes. In this paper we report molecular dynamics (MD) simulation results on the fundamental and secondary resonant frequencies f of cantilever graphene nanostrips with different layer number n and different nanostrip length L. The results deviate significantly from the prediction of not only the Euler-Bernoulli beam theory (f∝nL⁻²), but also the Timoshenko's model. Since graphene nanostrips have extremely high intralayer Young's modulus and ultralow interlayer shear modulus, we propose a multibeam shear model (MBSM) that neglects the intralayer stretch but accounts for the interlayer shear. The MBSM prediction of the fundamental and secondary resonant frequencies f can be well expressed in the form f−f_mono∝[(n-1)/n]^bL^−2(1−b), where f_mono denotes the corresponding resonant frequency as the layer number is 1, with b=0.61 and 0.77 for the fundamental and secondary resonant modes. Without any additional parameters fitting, the prediction from MBSM agrees excellently with the MD simulation results. The model is thus of importance for designing multilayer graphene nanostrips based applications, such as resonators, sensors and actuators, where interlayer shear has apparent impacts on the mechanical deformation, vibration and energy dissipation processes therein.     

用各向同性材料实现宽带声波功能器件设计

利用坐标变换的方法并结合保角映射技术,论文介绍了一种利用常规的各向同性材料来设计声波器件的方法.基于此理论,设计了二维声波隐身斗篷,并进行有限元模拟,证明了该器件的有效性.另外由于设计中没有利用材料共振的性质,所以器件是宽带有效的.该方法将有助于拓宽声波功能器件的设计,并为实验验证声波器件提供了可能.     

In-Situ Synthesis and Characterization of Nanocomposites in the Si-Ti-N and Si-Ti-C Systems

The pyrolysis (1000 °C) of a liquid poly(vinylmethyl-co-methyl)silazane modified by tetrakis(dimethylamido)titanium in flowing ammonia, nitrogen and argon followed by the annealing (1000–1800 °C) of as-pyrolyzed ceramic powders have been investigated in detail. We first provide a comprehensive mechanistic study of the polymer-to-ceramic conversion based on TG experiments coupled with in-situ mass spectrometry and ex-situ solid-state NMR and FTIR spectroscopies of both the chemically modified polymer and the pyrolysis intermediates. The pyrolysis leads to X-ray amorphous materials with chemical bonding and ceramic yields controlled by the nature of the atmosphere. Then, the structural evolution of the amorphous network of ammonia-, nitrogen- and argon-treated ceramics has been studied above 1000 °C under nitrogen and argon by X-ray diffraction and electron microscopy. HRTEM images coupled with XRD confirm the formation of nanocomposites after annealing at 1400 °C. Their unique nanostructural feature appears to be the result of both the molecular origin of the materials and the nature of the atmosphere used during pyrolysis. Samples are composed of an amorphous Si-based ceramic matrix in which TiN_xC_y nanocrystals (x + y = 1) are homogeneously formed “in situ” in the matrix during the process and evolve toward fully crystallized compounds as TiN/Si₃N₄, TiN_xC_y (x + y = 1)/SiC and TiC/SiC nanocomposites after annealing to 1800 °C as a function of the atmosphere.     

Switching in Metal–Organic Frameworks

In recent years, metal–organic frameworks (MOFs) have become an area of intense research interest because of their adjustable pores and nearly limitless structural diversity deriving from the design of different organic linkers and metal structural building units (SBUs). Among the recent great challenges for scientists include switchable MOFs and their corresponding applications. Switchable MOFs are a type of smart material that undergo distinct, reversible, chemical changes in their structure upon exposure to external stimuli, yielding interesting technological applicability. Although the process of switching shares similarities with flexibility, very limited studies have been devoted specifically to switching, while a fairly large amount of research and a number of Reviews have covered flexibility in MOFs. This Review focuses on the properties and general design of switchable MOFs. The switching activity has been delineated based on the cause of the switching: light, spin crossover (SCO), redox, temperature, and wettability.     

A Photochemical/Thermal Switch Based on 4,4′-Bis(benzimidazolio)stilbene: Synthesis and Supramolecular Properties.

Stilbene derivatives are well-recognised substructures of molecular switches based on photochemically and/or thermally induced (E)/(Z) isomerisation. We combined a stilbene motif with two benzimidazolium arms to prepare new sorts of supramolecular building blocks and examined their binding properties towards cucurbit[n]urils (n=7, 8) and cyclodextrins (β-CD, γ-CD) in water. Based on the ¹H NMR data and molecular dynamics simulations, we found that two distinct complexes with different stoichiometry, i. e., guest@β-CD and guest@β-CD₂, coexist in equilibrium in a water solution of the (Z)-stilbene-based guests. We also demonstrated that the bis(benzimidazolio)stilbene guests can be transformed from the (E) into the (Z) form via UV irradiation and back via thermal treatment in DMSO.     

Electrochemistry in Carbon‐based Quantum Dots

Electrochemistry belongs to an important branch of chemistry that deals with the chemical changes produced by electricity and the production of electricity by chemical changes. Therefore, it can not only act a powerful tool for materials synthesis, but also offer an effective platform for sensing and catalysis. As extraordinary zero‐dimensional materials, carbon‐based quantum dots (CQDs) have been attracting tremendous attention due to their excellent properties such as good chemical stability, environmental friendliness, nontoxicity and abundant resources. Compared with the traditional methods for the preparation of CQDs, electrochemical (EC) methods offer advantages of simple instrumentation, mild reaction conditions, low cost and mass production. In return, CQDs could provide cost‐effective, environmentally friendly, biocompatible, stable and easily‐functionalizable probes, modifiers and catalysts for EC sensing. However, no specific review has been presented to systematically summarize both aspects until now. In this review, the EC preparation methods of CQDs are critically discussed focusing on CQDs. We further emphasize the applications of CQDs in EC sensors, electrocatalysis, biofuel cells and EC flexible devices. This review will further the experimental and theoretical understanding of the challenges and future prospective in this field, open new directions on exploring new advanced CQDs in EC to meet the high demands in diverse applications.     

First-principles study of thiophene on β-SiC (0 0 1)-(2×1) surface

In this work, we performed density functional calculations to examine the molecular adsorption states of thiophene on β-SiC(0 0 1)-2×1 surface. A number of possible adsorption geometries are considered into two groups as the polymeric thiophene chain and the individual molecules covalently bonded onto the surface. The results show that the polymeric chain on the surface is the less stable adsorption case and individual arch like adsorption case structure is more stable than others. In all adsorption cases, the adsorbed SiC surfaces are characterized as different semiconductors.     

Control of the Interface Between Electron‐Hole and Electron‐Ion Plasmas: Hybrid Semiconductor‐Gas Phase Devices as a Gateway for Plasma Science

Coupling electron‐hole (e^–‐ h⁺) and electron‐ion plasmas across a narrow potential barrier with a strong electric field provides an interface between the two plasma genres and a pathway to electronic and photonic device functionality. The magnitude of the electric field present in the sheath of a low temperature, nonequilibrium microplasma is sufficient to influence the band structure of a semiconductor region in immediate proximity to the solid‐gas phase interface. Optoelectronic devices demonstrated by leveraging this interaction are described here. A hybrid microplasma/semiconductor photodetector, having a Si cathode in the form of an inverted square pyramid encompassing a neon microplasma, exhibits a photosensitivity in the ～420–1100 nm region as high as 3.5 A/W. Direct tunneling of electrons into the collector and the Auger neutralization of ions arriving at the Si surface appear to be facilitated by an n ‐type inversion layer at the cathode surface resulting from bandbending by the microplasma sheath electric field. Recently, an npn plasma bipolar junction transistor (PBJT), in which a low temperature plasma serves as the collector in an otherwise Si device, has also been demonstrated. Having a measured small signal current gain h_fe as large as 10, this phototransistor is capable of modulat‐ing and extinguishing the collector plasma with emitter‐base bias voltages <1 V. Electrons injected into the base when the emitter‐base junction is forward‐biased serve primarily to replace conduction band electrons lost to the collector plasma by secondary emission and ion‐enhanced field emission in which ions arriving at the base‐collector junction deform the electrostatic potential near the base surface, narrowing the potential barrier and thereby facilitating the tunneling of electrons into the collector. Of greatest significance, therefore, are the implications of active, plasma/solid state interfaces as a new frontier for plasma science. Specifically, the PBJT provides the first opportunity to control the electronic properties of a material at the boundary of, and interacting with, a plasma. By specifying the relative number densities of free (conduction band) and bound (valence band) electrons at the base‐collector interface, the PBJT's emitter‐base junction is able to dictate the rates of secondary electron emission (including Auger neutralization) at the semiconductor‐plasma interface, thereby offering the ability to vary at will the effective secondary electron emission coefficient for the base surface (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

透镜检测中复合自动对焦技术的研究及应用

针对光学透镜参数测量系统中的对焦问题,设计了一种粗精结合的复合自动对焦方案.在粗对焦过程中,选用全局图像的方差函数作为清晰度评价函数,用均值比较的爬山法实现焦面搜索,并用三点法判断初始对焦方向.在精对焦过程中,利用基于数学形态学的条件膨胀算法和形状因子提取目标图像,并以日标图像区域内的Brenner函数作为清晰度评价函...